Stabilization of the Ferroelectric Phase in Epitaxial Hf_1–<i>x</i>Zr<i>_x</i>O₂ Enabling Coexistence of Ferroelectric and Enhanced Piezoelectric Properties

Orientation Dependence of the Piezoelectric Properties of Epitaxial Ferroelectric Thin Films

Title of Document: ORIENTATION DEPENDENCE OF THE PIEZOELECTRIC PROPERTIES OF EPITAXIAL FERROELECTRIC THIN FILMS Jun Ouyang, Doctor of Philosophy, 2005 Directed By: Professor Alexander. L. Roytburd Dept. of Materials Science and Engineering There are both intrinsic piezoelectric response and extrinsic piezoelectric response in ferroelectric materials. The intrinsic piezoelectric response is due ...

Epitaxial strain stabilization of a ferroelectric phase in PbZrO3 thin films

PbZrO3/SrRuO3/SrTiO3 (100) epitaxial heterostructures with different thickness of the PbZrO3 (PZO) layer (dPZO ∼ 5–160 nm) were fabricated by pulsed laser deposition. The ultrathin PZO films (dPZO 10 nm) were found to possess a rhombohedral structure. On increasing the PZO film thickness, a bulk like orthorhombic phase started forming in the film with dPZO ∼ 22 nm and became abundant in the thi...

Piezoelectric and pyroelectric properties of ferroelectric Langmuir-Blodgett polymer films

Electrical conductivity enhanced dielectric and piezoelectric properties of ferroelectric 0-3 composites

We have investigated the effects of electrical conductivity of the constituents on the dielectric and piezoelectric properties of ferroelectric 0-3 composites. The time-dependent internal electric fields are first derived, which can be induced by an applied ac field in dielectric measurement or stress in piezoelectric measurement. Our previously developed model fC. K. Wong, Y. M. Poon, and F. G...

Domain Engineering for Enhanced Ferroelectric Properties of Epitaxial (001) BiFeO Thin Films

Adv. Mater. 2009, 21, 817–823 2009 WILEY-VCH Verlag Gm Multiferroic BiFeO3 has attracted great interest due to its promising application tomagnetoelectric devices. In addition, the high remanent polarization and piezoelectric response of BiFeO3 thin films, which are comparable to those of conventional Ti-rich lead zirconia titanate, suggested BiFeO3 as a strong candidate for lead-free nonvolati...